Study of Optical and Electrical Properties for GaN Light Emitting Diodes

• Main Authors: Jing-Huan Chen, 陳靖桓
• Other Authors: Mon-Shu Ho
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/65837335821382738550

碩士 === 國立中興大學 === 物理學系所 === 100 === This study is for GaN blue light emitting diodes to do research , analysis its structure and material properties , and change the experiment process according to the characteristic of the current spreading . We reduce the P layer hole concentration , maks its impedance to increase , result current spreading effect to increase. In the experiment process can use the light-excited fluorescence method(Photoluminescence) wavelength to analysis, when completed devices , can make use of scanning electron microscopy(SEM) for detailed observation. Follow-up measurement device characteristics , useing the LED Prober to analysis the wavelength and electrical properties. When the devices of the basic characteristics of the measurement is completed , and the devices of Electrostatic Discharge( ESD) test , which means that determine devices pass or fail . Finally , the use of CCD as the light detector, when the current input device , the situation can be observed in light-emitting at different times , which the case that the current spreading . When all testing is complete, we can use statistical analysis methods to calculate the results of this process, the devices levels of the distribution of the case.