| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 100 === This study is for GaN blue light emitting diodes to do research , analysis its structure and material properties , and change the experiment process according to the characteristic of the current spreading . We reduce the P layer hole concentration , maks its impedance to increase , result current spreading effect to increase. In the experiment process can use the light-excited fluorescence method(Photoluminescence) wavelength to
analysis, when completed devices , can make use of scanning electron microscopy(SEM) for detailed observation.
Follow-up measurement device characteristics , useing the LED Prober to analysis the wavelength and electrical properties.
When the devices of the basic characteristics of the measurement is completed , and the devices of Electrostatic Discharge( ESD) test , which means that determine devices pass or fail . Finally , the use of CCD as the light detector, when the current input device , the situation can be observed in light-emitting at different times , which the case that the current spreading . When all testing is complete, we can use statistical analysis methods to calculate the results of this process, the devices levels of the distribution of the case.
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