Epitaxial Growth of GaN Templates by MOCVD for LED Applications
博士 === 國立中興大學 === 材料科學與工程學系所 === 100 === Gallium nitride (GaN) is a binary III/V direct bandgap semiconductor that has been widely used in light-emitting diodes (LEDs) since the 1990s. The compound is a hard material with a Wurtzite crystal structure. The wide band gap of 3.4 eV provides the mat...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06016724983150070441 |