| Summary: | 碩士 === 國立中興大學 === 材料科學與工程學系所 === 100 === Electronic devices will generate electromagnetic waves during operation, to avoid the interaction of electromagnetic waves and cause Electromagnetic Interference, EMI on devices, sputter coating conductive film on top side of molded device, thus isolating Electromagnetic Interference by metal shielding effectiveness. This research uses copper and stainless multi layers thin film structure as anti-EMI layer and investigate basic characteristic and interface adhesion strength, and analyze the influence toward interface adhesion strength by surface plasma treatment or adding stainless buffer layer on molding compound. The experiment uses nanoindenter to measure the mechanical properties (hardness、elastic modulus) of copper and stainless thin film, using tape peeling test to evaluate the adhesion strength of copper and stainless thin film, and use nanoscratch tester to analyze the interface adhesion strength. This research finds that it can effectively enhance the interface adhesion strength between thin film structure and molding compound with Plasma treatment, oxygen gas has the best effect, argon gas follows by ; the interface adhesion energy of no plasma treatment, argon treatment and oxygen treatment was measured as 0.04,1.79,2.42 J/m2 by nanoscratch test, respectively, adding stainless buffer layer also have the effect to strengthen the adhesion strength of coating layer, interface adhesion energy can be raised up to 0.92 J/m2 ,can reach 3.56 J/m2 after plasma treatment or even higher.
|
|---|
