Study of the series-connection InGaN optoelectronic devices

• Main Authors: Chien-Fei Huang, 黃建飛
• Other Authors: Chia-Feng Lin
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/02779978836741603806

碩士 === 國立中興大學 === 材料科學與工程學系所 === 100 === In this thesis, we prepared the two different samples, one was series-connection LED (SC-LED) structure and another one was standard LED (ST-LED) structure. The SC-LED structure consisted of the 11 small mesa regions through the series connection process. The wavelength blueshift phenomenon of the electrolumescence (EL) spectra in SC-LED was larger than ST-LED that could be caused by the band-filling effect obviously in the SC-LED. The wavelength redshift phenomenon of the electrolumescence (EL) spectra in ST-LED was larger than SC-LED due to the thermal joule heat at high injection power. Under the same operation power, the driving current in the SC-LED was small than the ST-LED that the current density of the SC-LED was slightly higher than the ST-LED. At 1 watt operation power, the light output power of the SC-LED had a 13.5% enhancement compared with the ST-LED. In the solar measurement, the open-circuit voltage and the short-circuit current were measured at 21.72V/1.14×10-7A and 2.25V/1.81×10-6A for the SC-LED and ST-LED, respectively. The short-circuit current of the ST-LED had a 15.8 times enhancement compared with the SC-LED under the full-band light illumination. The current match property induced the lower solar efficiency was observed in the SC-LED structure compared with the ST-LED structure. The high Voc property of the SC-LED had the potential application for the concentrated photovoltaic device in the near UV region.