Finite Element Method Investigation for Stress Distribution in Advanced Transistor Devices

• Main Authors: Kun-Han Lin, 林昆翰
• Other Authors: 張書通
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/36114499012984979962

碩士 === 國立中興大學 === 光電工程研究所 === 100 === In this thesis, we use ANSYS simulator based on finite element method to study the stress distribution in the channel region of transistor device. Two types of stressors, namely SiGe S/D stressors and CESL, are investigated in this work. We study the impact of process parameters, such as initial stress of SiN-capping layer, S/D stressor due to lattice mismatch between S/D region and channel, channel width, and gate length on the stress distribution in the channel of transistor device.