Finite Element Method Investigation for Stress Distribution in Advanced Transistor Devices
碩士 === 國立中興大學 === 光電工程研究所 === 100 === In this thesis, we use ANSYS simulator based on finite element method to study the stress distribution in the channel region of transistor device. Two types of stressors, namely SiGe S/D stressors and CESL, are investigated in this work. We study the impact of...
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| Format: | Others |
| Language: | zh-TW |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/36114499012984979962 |
| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 100 === In this thesis, we use ANSYS simulator based on finite element method to study the stress distribution in the channel region of transistor device. Two types of stressors, namely SiGe S/D stressors and CESL, are investigated in this work.
We study the impact of process parameters, such as initial stress of SiN-capping layer, S/D stressor due to lattice mismatch between S/D region and channel, channel width, and gate length on the stress distribution in the channel of transistor device.
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