| Summary: | 碩士 === 國立中興大學 === 光電工程研究所 === 100 === In this thesis, we study a nanocomposite dielectric for flexible a-IGZO Thin Film Transistors, it combines both organic polymer PVP and inorganic nanoparticle aluminum oxide to perform the gate dielectric.The uniqe advantage of the gate dielectric is that simple and solution process, first we find the optimization parameter of gate dielectric which used as a MIM structure, and we spin coated the gate dielectric in the glass and PEN substrate.In combination of both organic and inorganic gate dielectric electrical characterization was well and good, and we found two major advantages one is thate always in the enhancement mode, and the other one is robust when it is bending more than one hundred times.The TFT performance was without adding Al2O3 was exhibit 0.48 cm2/V-s of mobility, 0.3 V of threshold voltage, 104 of on off ratio and 0.98V/dec of subthreshold swing, and after adding the Al2O3 the TFT was improved to 5.01 cm2/V-s of mobility, 1.9 V of threshold voltage, 106 of on off ratio and 1.2V/dec of subthreshold swing.
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