High efficiency silicon based thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition

• Main Authors: Huang, Mingchien, 黃銘謙
• Other Authors: Lien, Shuiyang
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/x29awa

碩士 === 明道大學 === 材料科學與工程學系碩士班 === 100 === In this study, the pin single-junction amorphous and microcrystalline silicon tandem thin film solar cells were prepared by very high frequency plasma enhanced chemical vapor deposition. Various process parameters and cell structures influencing on the performance of solar devices were investigated. Firstly, the effects of thicknesses and gas flow of p-layer and process pressure of intrinsic layer on devices performance were discussed in this study. The highest deposition rate of 1.95 Å/s and photo/dark conductivity of 5.9 × 104 Ω-1cm-1 was obtained at the deposition pressure 30 Pa. At this pressure, the cell performance was and was Voc of 0.75 V, Jsc of 12.70 mA/cm2, FF of 0.52, and η of 5% after insetting the buffer layer into original solar configuration (Glass/TCO/p-a-Si:H/b-a-Si:H /i-a-Si:H/n-a-Si:H/TCO/Metal). On the other hand, the effect of p-layer and intrinsic layer in (Glass/TCO/p-μc-Si:H/i-μc-Si:H/n-μc-Si:H/TCO/Metal) single junction μc-Si:H solar cell structures were also discussed in this study. The effects of different B2H6 flow rate on crystallinity and conductivity of p-layer, and the effect of silane flow rates, pressure and power on the thin film characteristics of i-layer have been optimized. The solar device with the optimal single junction μc-Si:H films could reach the conversion efficiency of 2.24%(Voc=0.28 V, F.F.=0.41, Jsc=19.30 mA/cm2).