The effect of pulse plating on stress and grain growth of copper coating

• Main Authors: Yu-Jhih Huang, 黃毓智
• Other Authors: Wen-Pin Weng
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/05703194902988339658

碩士 === 龍華科技大學 === 工程技術研究所 === 100 === This research is the theoretical basis and precise experimental analysis to investigate the impact of the supply mechanism for the coating stress, grain growth and surface morphology. On the experimental side, the use of reverse-pulse current (PR) plating copper on the copper plating solution, and the spiral strain gauge to discuss the probe coating stress changes. Analysis by optical microscopy (OM) and atomic particles microscope (AFM), field emission electron microscopy (SEM) analysis of the plating cross section, the grain surface morphology and flatness changes. Pulse current 2 of ASD plating cross section intact, detailed grain size is relatively average, a flat rate of about 1.49, so pulse current 2 of ASD Make electroplating parameters of the main through the OM and AFM measurements found. Pulse parameter combination experiments, through SEM analysis to enhance the pulse ratio can effectively reduce the plating grain size, prompting grain detailed oriented, more dense coating structure grain stack. Pulse ratio than the upgrade through do improve the peak current density or the pulse period changes. Make the average grain size in the parameter combination of the peak current density decreased to 112.75 nm, the coating stress to 0.647 kg/mm2. The parameter combination of the pulse period reduces average grain size decreased to 179.40 nm, the coating stress to 1.023 kg/mm2. In wafer coating stress analysis we found a leveler in the organic additives to reduce the effect of the coating internal stress.