A Study on Microstructure and Abrasive Resistance of Ti-Si-N Hard Films by Reactive Sputtering

碩士 === 國立高雄應用科技大學 === 模具工程系 === 100 === This research is to deposite TiSiN film on ASP2030 tool steel using magnetron-reactive sputtering. The TiSiN films with different ratio of Ti/Si are deposited under controlling the Ti/Si ratio of targets and input watt with the fixed gas flow and working press...

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Bibliographic Details
Main Authors: SHAO-YU HSIEH, 謝少宇
Other Authors: Shi-Yung Chiou
Format: Others
Language:zh-TW
Online Access:http://ndltd.ncl.edu.tw/handle/44835703086899783682
Description
Summary:碩士 === 國立高雄應用科技大學 === 模具工程系 === 100 === This research is to deposite TiSiN film on ASP2030 tool steel using magnetron-reactive sputtering. The TiSiN films with different ratio of Ti/Si are deposited under controlling the Ti/Si ratio of targets and input watt with the fixed gas flow and working pressure.The environmental scanning electron microscope (ESEM) and low-angle X-ray diffractor and used to analyze the concentration of Ti and Si and crystalline structure of the film. The vicker’s hardness tester and Rockwell hardness tester and roughness measurement equipment are applied to detect the film hardness , adhesion and surface roughness. The TiN deposition is undertaken to compare with TiSiN in morpholohgy, surface roughness film hardness and thread-forming performance. The results show that the greater input watt may increase the deposition rate and surface roughness. The ratio of Ti and Si in the film just depends on the ratio of Ti and Si in the target and the average Si content in the TiSiN film is 25at%. The measured TiSiN hardness is around 2000HV,which may be higher than one of TiN by 900HV. The adhesion of TiSiN on ASP2030 may be categorized VDI3198 HF4. The tapping tests for thread-forming performance show the abrasion area of protruding surface of the Tap deposited with TiSiN have 0.50mm while the Tap deposited with TiN may have 0.76mm abrasion area of protruding surface, which appears TiSiN has more abrasion resistance than TiN.