Study on the characteristics for ZnS buffer layer of thin-film PV solar cell fabricated by Chemical Bath Deposition and Sputtering methods

• Main Authors: Jr-Chao Kang, 康智超
• Other Authors: Fu-Ren Tsai
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/90497125969040257677

碩士 === 崑山科技大學 === 光電工程研究所 === 100 === This study used chemical bath deposition (CBD) and sputtering two process prepared zinc sulfide buffer layer of a CuInSe2 (CIS) solar cells. CBD process is divided into two methods: (1) static solution reaction film; (2) stirring-mix solution reaction film. Two process completed the individual system analysis the experiment, the ZnS films are firstly grown on soda-lime glass substrate, then the optimal process parameters can be obtained by analysis, then they can be stacked and coated in CIS / Mo / Soda-lime. Then they are measured by four-point probe electrical analysis to obtain p-n diode characteristic curve. So that best parameters of the film in the process can be judged whether they have an excellent diodecharacteristics of buffer layer for CIS solar cells. After experimental analysis, it can be found that the sputtering process pressure with 2.5 mtorr and the RF sputtering power with 400W are easier to control film growth rate with a more uniform and compact crystallinity film quality at the two process methods. As referring previous experiments for CBD methods, the desired parameters with 0.08 mol/L zinc sulfate, 0.24 mol/L thiourea, 2 mol/L ammonia, 1.5 mol/L hydrazine and 0.03 mol/L citric acid sodium, are adopted for the growth mode of reagent concentration. It is found by analyses that film quality performance of static bubble reaction film with (90 ° C, 30min) is better than stirring the solution reaction film with (80 ° C, 30min), but its crystalline film growth rate is worse than that of stirring-mix solution reaction film, and stirring-mix solution reaction film is also with better performance at optical properties analysis. Through the electrical analysis measurement after stack CIS / Mo / Soda-lime, it can be found that all process method can effectively form a p-n junction, among them, stirring-mix solution reaction film with (80 ° C, 30min) can get better results. Thus, it can determine that the CBD with stirring the solution reaction film can obtain the better ZnS buffer layer of CuInSe2 solar cell. From the results also proved that the CBD with static solution reaction film has its feasibility to obtain ZnS buffer layer of CuInSe2 solar cell.