A study on the Ag/n-ZnO thin film Schottky diode

• Main Authors: Tsung-Hsien Tu, 凃宗賢
• Other Authors: Wen-Chang Huang
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/91343592370066964362

碩士 === 崑山科技大學 === 光電工程研究所 === 100 === The preparation of sol-gelprocessed zinc oxide (ZnO) thin film and ZnO based Schottky were proposed in the thesis.The ZnO thin film was deposited on Si substrate and annealed by rapid thermal annealing at 800℃ for 45 sec.The electrodes of the Schottky diode was deposited silver by thermal evaporation and then were annealed by RTA at 200 and 350℃, respectively.The Schottky diode shows a barrier height of 0.84 eV with an ideality factor of 1.74 and a reverse leakage current of 0.12 mA after was annealed at 350℃. In addition,the Norde model and Cheung''s equation,were also used to discuss the barrier height and series resistance effects.For the temperature dependent current-voltage characteristics, the Schottky diode shows a increase of barrier height and a decrease of ideality factor as the measured temperature increased. The barrier inhomogeneous effect it was also discussed through Gauss distribution model in the temperature dependent effects.