Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method
碩士 === 崑山科技大學 === 光電工程研究所 === 100 === In recent years, light emitting diodes (Light Emitting Diode, LED) began to be used in life, as the technology development and increase of the environmental consciousness, gradually to replace the traditional illumination by LED lighting. The LED are possess bet...
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ndltd-TW-100KSUT51240012015-10-13T21:27:24Z http://ndltd.ncl.edu.tw/handle/58219325117938339801 Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method 以陽極氧化鋁奈米模板輔助成長奈米碳管及應用於發光二極體之熱傳導研究 Wun-Jie Tan 譚文傑 碩士 崑山科技大學 光電工程研究所 100 In recent years, light emitting diodes (Light Emitting Diode, LED) began to be used in life, as the technology development and increase of the environmental consciousness, gradually to replace the traditional illumination by LED lighting. The LED are possess better saving power and long lifetime, LED can be divided into high-power (Hight power) and low-power (Low power) LED, among the high-power LED is comparative difficult dissipation heat. The LED is a light-emitting devices of high fever, but the heat of generated by high-power LED was significantly exceed more than the low-power LED of traditional. Due to grain size of the LED is very narrow create package after dissipation heat was not easy, when heat not from the PN junction (PN junction) to dissipation will result in light loss and the wavelength drift caused reduce to lifetime. When the internal devices accepted thermal expansion is uneven, caused the devices accept outride load mechanical stress bring about damage. This research was used thermal conductivity of the carbon nanotubes to improve the junction effect. However, the carbon nanotubes have high thermal conductivity coefficient 3000 ~ 6000 (W / mK). In this study, Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method to improve thermal conductivity characteristic of the LED P-N junction. In this papers, growth of the carbon nanotubes by using the plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), analyzed the carbon nanotubes investigated the surface temperature: Epoxy(65.4 ℃)、Epoxy+CNTs 1 wt%(60.5 ℃)、CNTs on Si(44.9 ℃)、CNTs/AAO on Si(40.8 ℃)、CNTs/AAO+Epoxy on Si(446.7 ℃)。 甘廣宙 2012 學位論文 ; thesis 79 zh-TW |
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碩士 === 崑山科技大學 === 光電工程研究所 === 100 === In recent years, light emitting diodes (Light Emitting Diode, LED) began to be used in life, as the technology development and increase of the environmental consciousness, gradually to replace the traditional illumination by LED lighting. The LED are possess better saving power and long lifetime, LED can be divided into high-power (Hight power) and low-power (Low power) LED, among the high-power LED is comparative difficult dissipation heat. The LED is a light-emitting devices of high fever, but the heat of generated by high-power LED was significantly exceed more than the low-power LED of traditional. Due to grain size of the LED is very narrow create package after dissipation heat was not easy, when heat not from the PN junction (PN junction) to dissipation will result in light loss and the wavelength drift caused reduce to lifetime. When the internal devices accepted thermal expansion is uneven, caused the devices accept outride load mechanical stress bring about damage.
This research was used thermal conductivity of the carbon nanotubes to improve the junction effect. However, the carbon nanotubes have high thermal conductivity coefficient 3000 ~ 6000 (W / mK). In this study, Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method to improve thermal conductivity characteristic of the LED P-N junction.
In this papers, growth of the carbon nanotubes by using the plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), analyzed the carbon nanotubes investigated the surface temperature: Epoxy(65.4 ℃)、Epoxy+CNTs 1 wt%(60.5 ℃)、CNTs on Si(44.9 ℃)、CNTs/AAO on Si(40.8 ℃)、CNTs/AAO+Epoxy on Si(446.7 ℃)。
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author2 |
甘廣宙 |
author_facet |
甘廣宙 Wun-Jie Tan 譚文傑 |
author |
Wun-Jie Tan 譚文傑 |
spellingShingle |
Wun-Jie Tan 譚文傑 Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method |
author_sort |
Wun-Jie Tan |
title |
Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method |
title_short |
Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method |
title_full |
Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method |
title_fullStr |
Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method |
title_full_unstemmed |
Investigation of Thermal Conductivity of Light Emitting Diode Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method |
title_sort |
investigation of thermal conductivity of light emitting diode using the carbon nanotubes fabricated by anodic aluminum oxide nano-template method |
publishDate |
2012 |
url |
http://ndltd.ncl.edu.tw/handle/58219325117938339801 |
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