| Summary: | 碩士 === 崑山科技大學 === 光電工程研究所 === 100 === In recent years, light emitting diodes (Light Emitting Diode, LED) began to be used in life, as the technology development and increase of the environmental consciousness, gradually to replace the traditional illumination by LED lighting. The LED are possess better saving power and long lifetime, LED can be divided into high-power (Hight power) and low-power (Low power) LED, among the high-power LED is comparative difficult dissipation heat. The LED is a light-emitting devices of high fever, but the heat of generated by high-power LED was significantly exceed more than the low-power LED of traditional. Due to grain size of the LED is very narrow create package after dissipation heat was not easy, when heat not from the PN junction (PN junction) to dissipation will result in light loss and the wavelength drift caused reduce to lifetime. When the internal devices accepted thermal expansion is uneven, caused the devices accept outride load mechanical stress bring about damage.
This research was used thermal conductivity of the carbon nanotubes to improve the junction effect. However, the carbon nanotubes have high thermal conductivity coefficient 3000 ~ 6000 (W / mK). In this study, Using the Carbon Nanotubes Fabricated by Anodic Aluminum Oxide Nano-Template Method to improve thermal conductivity characteristic of the LED P-N junction.
In this papers, growth of the carbon nanotubes by using the plasma-enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD), analyzed the carbon nanotubes investigated the surface temperature: Epoxy(65.4 ℃)、Epoxy+CNTs 1 wt%(60.5 ℃)、CNTs on Si(44.9 ℃)、CNTs/AAO on Si(40.8 ℃)、CNTs/AAO+Epoxy on Si(446.7 ℃)。
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