The Study Of Organic Thin-Film Transistors With Transparent Source/Drain Electrodes

• Main Authors: Tsai, Hsianglin, 蔡享霖
• Other Authors: Meiso Yokoyama
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/02608533784084775852

碩士 === 義守大學 === 電子工程學系 === 100 === In this work, we applied a transparent electrode as the source/drain electrodes in organic thin-film transistors (OTFTs). The transparent electrode consisted of a low resistance metal, silver, which was sandwiched by high transmittance oxides, WO3. The optimum structure of transparent electrodes could be obtained by tuning the thickness in each layer of transparent electrode, which had a sheet resistance of 6.2 Ω/sq and an optical transmittance of 70% in the visible wavelength range of 380–780 nm. Utilizing the optimum structure of transparent electrode as the source/drain electrodes in Pentacene-based OTFTs exhibited the output current (IDS) of -7.08 μA, field-effect mobility of 0.22 cm2/Vs, on-off drain current ratio of 1.8×105, and threshold voltage of -15.1 V. The performance of OTFTs using WO3(5 nm)/Ag(10 nm)/WO3(30 nm) as source/drain electrodes is much better than that using silver. It is attributed to the HOMO of WO3/Ag/WO3 is much higher than silver. It is also attractive to develop transparent OTFTs as driving circuits for display pixels to reduce optical loss.