| Summary: | 碩士 === 義守大學 === 電子工程學系 === 100 === In this study, the different metal thin films were sputtered to form AZO/Metal/AZO sandwich structures, the Penetration was controlled higher than 80% and the conductivity properties of thin films was enhanced. The RF magnetron sputtering system had been used to deposit the different thickness metal layers and AZO thin film to form as AZO/Al/AZO (ALA), AZO/Cu/AZO (ACA) and AZO/Ag/AZO (AGA) structures. The X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystal orientation and structural characteristics, the atomic force microscope were used on surface to had root mean square roughness and the interface of D/M/D were performed by the transmission electron microscopy. The optoelectronic property was measured by UV spectroscopy and Hall measurement system. The results show when the Ag thickness is controlled as 9 nm, the best figure of merit of the AZO/Ag/AZO tri-layer film is 2.7×10-2 (Ω-1), it means that the lower resistivity of 8.9×10-5 Ω-cm and higher average transmittance of 81% of the transparent conducting oxides had been grown in our study.
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