| Summary: | 碩士 === 義守大學 === 材料科學與工程學系 === 100 === This thesis presents the investigation on the epitaxial growth of RAO3(MO)m thin films. A homologous compound of RAO3(MO)m family (R=In，Lu;A=In，Fe，Ga，Al;M=Zn，Cu;m=integer) consisting of an alternating stack of RO2- layer and AO(MO)m+ layer, respectively, may exhibit exceptional optoelectronic properties owing to its unique crystallographic structure. RAO3(MO)m is considered as a new material with great potentiality in various application fields such as electronic, and optoelectronic devices. In this study, the epitaxial growth of YbGaO3(ZnO)m thin films on and a-plane sapphire and (111)YSZ substrates by sputtering was studied.
This work can be divided into two parts. Firstly, the preparation of ceramic targets of YbGaO3(ZnO)m(YGZO) is addressed. In order to obtain targets with suitable density for meeting the need of sputtering process, the effect of sintering conditions (sintering temperature and duration), sintering procedure and composition, microstructure, and generated phase of sintering targets was systematically demonstrated. Secondly, the deposition of YGZO thin films on sapphire and YSZ substrates under various substrate temperatures was investigated. In addition, the effect of post-annealing process on the microstructure and crystalline quality of YGZO thin films was also discussed in the thesis.
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