Preparation and properties of nanostructure metal oxide and sulfide (Cu, In, Ni, and Zn) for solar cells

• Main Authors: Yu-Cheng Chen, 陳育徵
• Other Authors: Jen-Bin Shi
• Format: Others
• Language: en_US
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/9gm6y7

博士 === 逢甲大學 === 電機與通訊工程所 === 100 === In this study, the oxide and sulfide materials of Cu, In, Ni, and Zn are prepared by electrodeposition and annealing methods. For NiSx (x = 2, 1, and 2/3), Ni thin films on ITO glass have been prepared by electrodeposition method. Thin films of NiSx are grown by anneal Ni thin films at different temperatures and sulfur powders. The effects of annealing temperatures and sulfur powders are investigated. For sulfide of copper, copper sulfide (CuS) thin films on ITO glass have been prepared by one-step electrodeposition method. The effect of different electrodeposition current on the structural, morphological, and optical properties of CuS thin films is studied. Moreover, thin films of CuyS (y = 1.75, 1.8, 1.95, and 2.0) are grown by annealing CuS thin films at different temperatures and times. The effects of annealing temperatures and times are investigated. The chalcopyrite CuInS2 thin film is fabricated by sulfured Cu-In alloys. Cu-In alloys are deposited on ITO glass by electrodeposition method. When the Cu-In alloys are fabricated, it is put into a glass tube with the pure sulfur powder together. The structural, morphological, and optical properties of CuInS2 thin films are studied. Indium doped Zinc Oxide (IZO) thin films are deposited by a one-step electrodeposition method on ITO glass from aqueous solution. The aqueous solution of Zn(NO3)2 is fixed at 0.05 M. The effects are studied at different concentration of InCl3, and electrodeposition temperatures and voltages. These materials can be used in solar cells.