Improvement of Film Thickness of the Hole Blocking Layer and Hole Injection Layer in OLED

• Main Author: 周冠呈
• Other Authors: 呂輝宗
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/44491649750025387687

碩士 === 建國科技大學 === 電子工程系暨研究所 === 100 === We improved the OLED structure of ITO/m-MTDATA/NPB/Alq3/BPhen/LiF/Al by using film thinkness adjustment. After multiple rounds of improvement, the best thicknesses for m-MTDATA and BPhen in this structure were established to be 20 nm and 60 nm, respectively. The device drive voltage was 3.5 V, luminous efficiency reached 5.2 cd/A, and the maximum brightness was 13690 cd/m2. Compared to devices with a doped electron transport layer within the structure of ITO/m-MTDATA/NPB/Alq3/BPhen:Liq/LiF/Al, the device drive voltage was 4.6 V, luminous efficiency reached 4.9 cd/A, this improvement was able to reduce the producing cost.