| Summary: | 碩士 === 中華大學 === 電機工程學系碩士班 === 100 === Over the last decade, many research has gone into the development of more efficient alternate energy technologies, especially solar photovoltaic cells, are becoming progressively more desirable, innovative and cost-effective photovoltaic cell designs are being researched to make the technology economically competitive. Current efforts in the bulk silicon solar cell technology to increase efficiencies and lower processing costs are leaning towards thinner wafers, low-temperature continuous processing, and superior passivation and metallization schemes. Interdigitated-Back-Contact (IBC) crystalline silicon (c-Si) solar cells are a representative structure. The advantages of this structure include eliminate contact grid shading on the sunward side, decrease grid resistance due to wider coverage, and reduce stringing costs.
In this study, we expect to accomplish the Interdigitated Back Contact monocrystalline silicon solar cells. We focus on the effect of different rear interdigitated width of n and p-type si for device performance. The pn junction is formed by ion implantation technique, it is easy to control the junction depth comparing of traditional high temperature furnace process, and a good pn junction is obtained. In aspect of the antireflection coating film, the structure of SiNx stacked is fabricated for antireflection coating layer, the optical path length in the solar cell may be increased. Thermal grown thin Dry oxide films were used for surface passivation of crystalline silicon.
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