Wideband Active-Inductor Voltage Controlled Oscillator for SDR

• Main Authors: Wu, Ting-Wei, 吳定威
• Other Authors: Chuang, Tien-Min
• Format: Others
• Language: zh-TW
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/62119362904048606705

碩士 === 中華大學 === 電機工程學系碩士班 === 100 === This thesis mainly studies Wideband Active Inductor Voltage Controlled Oscillator for Soft-Defined Radio(SDR). The structure is divided into two parts. The first part is the design of the active inductor. In order to save the area occupied by passive inductor ,we use active inductor instead. Its principle is to use Gyrator structure such that active MOSFET can equivalent to inductor ,along with parasitic capacitor to form a resonator tank for an oscillator. The second part is the cross-coupled oscillator structure. Incorporating active inductor into our resonator oscillator, we can use its inductor and capacitor to achieve resonated effect. So that ,the whole circuit is only involved MOSFET and resistor to construct a VCO. In this way, we also save the consumed area by passive inductor. The design target is the enough bandwidth for SDR. Firstly ,we design and simulation of circuit designed with TSMC 0.35um 2P4M process. The frequency range to be controlled by voltage is from 0.37GHz to 1.39GHz. The simulated phase noise is small then -103dBc/Hz at 1MHz offset. The IC layout is implemented by Laker layout tool with 0.35um CMOS Library offered by TSMC. After DRC, LVS and Post-Layout simulation, we tape-out this VCO IC chip with chip area of 0.57mm × 0.57mm。