The Effect of Pt-Al Top Electrode and Al2O3 Interfacial Layer on Gd2O3 Resistive Switching Memory
碩士 === 長庚大學 === 電子工程學系 === 100 === Recently, gadolinium oxide has been proposed to be applied in the resistive switching random-access memory (RRAM). It exhibits different resistive switching properties depending on the properties of electrodes. In this work, the characteristics of gadolinium oxide...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00788299933479718301 |