The Effect of Pt-Al Top Electrode and Al2O3 Interfacial Layer on Gd2O3 Resistive Switching Memory

• Main Authors: De Yuan Jian, 簡德淵
• Other Authors: J. C. Wang
• Format: Others
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/00788299933479718301

碩士 === 長庚大學 === 電子工程學系 === 100 === Recently, gadolinium oxide has been proposed to be applied in the resistive switching random-access memory (RRAM). It exhibits different resistive switching properties depending on the properties of electrodes. In this work, the characteristics of gadolinium oxide resistive switching memory with different component of Pt-Al alloy electrode and post-metallization annealing (PMA) were investigated. The current-voltage (I-V) characteristics demonstrate the bipolar resistance switching behavior of all samples. This can be responsible for the oxygen vacancies induced resistance switching between the Pt-Al alloy/GdxOy interface. The more Al diffused into the GdxOy resistive switching film will result in the formation of thicker interface domain on the interface, which will contribute to the increase of Schottky barrier height and the resistance of HRS. Moreover, the retention characteristics of the GdxOy RRAM with Pt-Al alloy electrode were significantly improved owing to the formation of interface domain between the Pt-Al alloy/GdxOy interface to prevent the oxygen ions from out-diffusing through Pt grain boundary to atmosphere. In order to increase the quantity of movable oxygen ions on the interface to improve the yield and electrical characteristic, PMA with different gas was applied.