Design of Low Noise Amplifier and Variable Gain Amplifier for Multi-band Application

• Main Authors: Yu Da Hsieh, 謝育達
• Other Authors: W. S. Feng
• Format: Others
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/19093566999512238335

碩士 === 長庚大學 === 電子工程學系 === 100 === This thesis investigates on the “Design of Low Noise Amplifier and Variable Gain Amplifier for Multi-band Application”. In the future, we will integrate the multi-band LNA and VGA with the front-end receiver. The completion can be used in the 1.8/1.9/2.4/3.5/5/5.8GHz RF transceiver. The ultimate goal is to integrate the transceiver circuit into a single wafer to benefit the integration of the base-band circuit and to realize the manufacture of SoC (System on a Chip). In this thesis, LNA input return losses are smaller than those of -9 to -10dB. Output return losses are smaller than those of -11dB. LNA has a gain of 12.1 to 17.2dB and noise figure is smaller than 3.1 to 5.5dB. P1dB of -12 to -17. DC bias of 1.6V. Power consumption is 29.6mW. The chip size of 1.4×1.29 mm2. VGA has a gain of 0 to 30dB. Power consumption is 19mW. The chip size of 0.43×0.55 mm2. Three major ICs viz. Dual-band LNA, balun and VGA are designed by Vanguard International Semiconductor Corporation (VIS). Dual-band 2.4/5.8 GHz LNA input return losses are smaller than those of -13dB. Output return losses are smaller than those of -14dB. LNA has a gain of 18/11dB and noise figure is smaller than 4.8 to 4.7dB. DC bias of 2V. Power consumption is 45.8mW. The chip size of 1.37 mm2. Dual-band 2.4/5.8 GHz LNA and balun input return losses are smaller than those of -9dB. Output return losses are smaller than those of -10dB. LNA and balun has a gain of 11/12dB and noise figure is smaller than 4.4 to 4.9dB. DC bias of 2.5/1.5V. Power consumption is 48.5mW. The chip size of 4.316 mm2. VGA has a gain of 0 to 67.9dB. Power consumption is 9.27mW. The chip size of 0.3 mm2. The circuits are fabricated by VANGUARD of 0.25μm and 0.18μm process, respectively.