Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures

碩士 === 長庚大學 === 電子工程學系 === 100 === In recent years, MIM structure use high-k dielectric to increase the capacitance density has been widely discussed. However, rarely study about the defects induce charge trapping which from high-k dielectric material and resulting discharge problem in the DRAM capa...

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Bibliographic Details
Main Authors: Cheng Chao Tai, 戴呈兆
Other Authors: C. S. Lai
Format: Others
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/69281862518873374242

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