Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures

碩士 === 長庚大學 === 電子工程學系 === 100 === In recent years, MIM structure use high-k dielectric to increase the capacitance density has been widely discussed. However, rarely study about the defects induce charge trapping which from high-k dielectric material and resulting discharge problem in the DRAM capa...

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Main Authors: Cheng Chao Tai, 戴呈兆
Other Authors: C. S. Lai
Format: Others
Published: 2012
Online Access:http://ndltd.ncl.edu.tw/handle/69281862518873374242
id ndltd-TW-100CGU05428037
record_format oai_dc
spelling ndltd-TW-100CGU054280372015-10-13T21:28:02Z http://ndltd.ncl.edu.tw/handle/69281862518873374242 Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures 頻率分散及電荷捕捉於高介電MIM(DRAM)結構之研究 Cheng Chao Tai 戴呈兆 碩士 長庚大學 電子工程學系 100 In recent years, MIM structure use high-k dielectric to increase the capacitance density has been widely discussed. However, rarely study about the defects induce charge trapping which from high-k dielectric material and resulting discharge problem in the DRAM capacitor will have signal delay issue easier. The other challenges of MIM capacitor is very small coefficient of capacitance voltage (VCC). The performance of VCC is change from applied bias. The more unstable in the analog circuit applications, signal distortion and data loss will become more serious when the higher VCC , and the frequency dispersion behavior is widely discussion too. X material which has higher dielectric constant than ZrOx incorporated into dielectric layer materials can have 12% improvement in capacitance density. In the meantime, X material will make the charges trapped easily in the dielectric in constant current stress and following signal delay phenomenon in the DRAM. For the improvement of VCC, the anneal time was decreased to prevent the material of the electrode plates diffuse into the dielectric layer. In the short time anneal, the frequency dispersion behavior has significantly improved from 8635 ppm/V2 to 3330.2 ppm/V2. C. S. Lai J. C. Wang 賴朝松 王哲麒 2012 學位論文 ; thesis 83
collection NDLTD
format Others
sources NDLTD
description 碩士 === 長庚大學 === 電子工程學系 === 100 === In recent years, MIM structure use high-k dielectric to increase the capacitance density has been widely discussed. However, rarely study about the defects induce charge trapping which from high-k dielectric material and resulting discharge problem in the DRAM capacitor will have signal delay issue easier. The other challenges of MIM capacitor is very small coefficient of capacitance voltage (VCC). The performance of VCC is change from applied bias. The more unstable in the analog circuit applications, signal distortion and data loss will become more serious when the higher VCC , and the frequency dispersion behavior is widely discussion too. X material which has higher dielectric constant than ZrOx incorporated into dielectric layer materials can have 12% improvement in capacitance density. In the meantime, X material will make the charges trapped easily in the dielectric in constant current stress and following signal delay phenomenon in the DRAM. For the improvement of VCC, the anneal time was decreased to prevent the material of the electrode plates diffuse into the dielectric layer. In the short time anneal, the frequency dispersion behavior has significantly improved from 8635 ppm/V2 to 3330.2 ppm/V2.
author2 C. S. Lai
author_facet C. S. Lai
Cheng Chao Tai
戴呈兆
author Cheng Chao Tai
戴呈兆
spellingShingle Cheng Chao Tai
戴呈兆
Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures
author_sort Cheng Chao Tai
title Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures
title_short Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures
title_full Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures
title_fullStr Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures
title_full_unstemmed Frequency Dispersion and Charge Trapping Study on High-k MIM(DRAM) Structures
title_sort frequency dispersion and charge trapping study on high-k mim(dram) structures
publishDate 2012
url http://ndltd.ncl.edu.tw/handle/69281862518873374242
work_keys_str_mv AT chengchaotai frequencydispersionandchargetrappingstudyonhighkmimdramstructures
AT dàichéngzhào frequencydispersionandchargetrappingstudyonhighkmimdramstructures
AT chengchaotai pínlǜfēnsànjídiànhébǔzhuōyúgāojièdiànmimdramjiégòuzhīyánjiū
AT dàichéngzhào pínlǜfēnsànjídiànhébǔzhuōyúgāojièdiànmimdramjiégòuzhīyánjiū
_version_ 1718064581414223872