| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 100 === In recent years, MIM structure use high-k dielectric to increase the capacitance density has been widely discussed. However, rarely study about the defects induce charge trapping which from high-k dielectric material and resulting discharge problem in the DRAM capacitor will have signal delay issue easier. The other challenges of MIM capacitor is very small coefficient of capacitance voltage (VCC). The performance of VCC is change from applied bias. The more unstable in the analog circuit applications, signal distortion and data loss will become more serious when the higher VCC , and the frequency dispersion behavior is widely discussion too.
X material which has higher dielectric constant than ZrOx incorporated into dielectric layer materials can have 12% improvement in capacitance density. In the meantime, X material will make the charges trapped easily in the dielectric in constant current stress and following signal delay phenomenon in the DRAM. For the improvement of VCC, the anneal time was decreased to prevent the material of the electrode plates diffuse into the dielectric layer. In the short time anneal, the frequency dispersion behavior has significantly improved from 8635 ppm/V2 to 3330.2 ppm/V2.
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