The Design of V-band Down Conversion Circuits Using 90nm RF CMOS Technology
碩士 === 長庚大學 === 電子工程學系 === 100 === The microwave/millimeter-wave (MMW) receiver integrated circuits are presented and designed by using TSMC 90 nm RF CMOS technology in this thesis. In first part, a V-band voltage controlled oscillator using a push-push circuit topology is designed to avoid increasi...
Main Authors: | Chia Yi Chu, 朱家益 |
---|---|
Other Authors: | H. C. Chiu |
Format: | Others |
Published: |
2012
|
Online Access: | http://ndltd.ncl.edu.tw/handle/41070494469861902926 |
Similar Items
-
V-band Doherty Power Amplifier in 90nm CMOS Technology—Analysis and Implementation
by: Chu, Wei-Tung, et al.
Published: (2018) -
RF Sub-Circuits Design and 90-nm CMOS Transistor Characterization
by: Tai-Hsing Lee, et al.
Published: (2009) -
A Fully Integrated K-Band Dual Down-Conversion Receiver for Radar Applications in 90 nm CMOS
by: An'an Li, et al.
Published: (2020-01-01) -
Application and characterization on Dual-Gate transistor in 90-nm RF CMOS technology
by: Chih-Wen Yang, et al.
Published: (2009) -
Q-band 90nm CMOS Wideband Receiver
by: Huang, Chung-Ying, et al.
Published: (2015)