Design of GaAs Wideband Double-Balanced Gilbert Mixer and 2.4/3.5 GHz GaN Anti-Parallel Diode Pair Mixer
碩士 === 長庚大學 === 電子工程學系 === 100 === The research in this thesis is design and implementation of active and passive mixers, using a 0.15 um GaAs pHEMT process and a 0.35 um GaN-on-Si HEMT process. A 30 to 65 GHz active double-balanced mixer in the 0.15 um GaAs pHEMT process, using the traditional...
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| Format: | Others |
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2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/05724696341334433518 |
| Summary: | 碩士 === 長庚大學 === 電子工程學系 === 100 === The research in this thesis is design and implementation of active and passive mixers, using a 0.15 um GaAs pHEMT process and a 0.35 um GaN-on-Si HEMT process.
A 30 to 65 GHz active double-balanced mixer in the 0.15 um GaAs pHEMT process, using the traditional Gilbert mixer architecture, and charge injection techniques so that DC currents can be injected directly into the RF stage by this path. Therefore, it can reduce the voltage drop of the output load and increase the loaded impedance to enhance conversion gain of the mixer. Passive balun are used to convert the feed-in signals from single-ended to differential signals at the mixer RF port and LO port. Source follow structures are used to output current signals and achieve better output impedance matching.
2.4 GHz and 3.5 GHz passive diode mixers using 0.35 um GaN-on-Si HEMT process is designed. The main circuit architecture is an anti-parallel diode pair. Use Inductors and capacitors to replace open-stub and short-stub transmission line in traditional architecture. It is easier to achieve in the design of low-frequency mixer.
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