| Summary: | 碩士 === 國立中正大學 === 光機電整合工程研究所 === 100 === In this study, we epitaxial growth of ZnO thin films with MgO buffer layer were grown on (0001) c-sapphire by molecular beam epitaxy (MBE). The effect of HT-ZnO prepared on optical, crystal and morphological properties by Hierarchical Thermal Annealing in different layer is reported.
From XRD measurements, the narrowing of (002) diffraction peak (FWHM=71.65 arcsec, thermal annealing the MgO buffer layer) and (FWHM =108.68 arcsec, non-thermal annealing) shows the annealing MgO can improve the crystal quality effectively. Annealing the bottom layer is more effective for relase the stress, in which compared the annealing MgO buffer layer and only annealing the HT-ZnO, the strain decreased by 26%. In order to compare the non-thermal annealing sample that strain is decreased by 33%. The optimum AFM RMS is 0.255nm with annealing MgO buffer layer compared with annealing HT-ZnO decreased by 80%. Annealing the MgO buffer layer has the highest edge band emission is due to crystal quality enheacement by photoluminescence (PL) measurement.
From above results, it was found that annealing the bottom layer can control stress accumulation more effectively for high-quality ZnO thin film growth.
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