Kinetic Lattice Monte Carlo Simulation for Boron Diffusion in Si and at SiGe/Si Interface
碩士 === 國立中正大學 === 化學暨生物化學研究所 === 100 === The kinetic lattice Monte Carlo simulation (KLMC) was applied to study the boron diffusion in SiGe/Si interface beyond nanotechnology. Both the interstitialcy and kick-out mechanisms of boron diffusion were considered, including the effects of annealing tempe...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2012
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| Online Access: | http://ndltd.ncl.edu.tw/handle/43626213323602527494 |