Kinetic Lattice Monte Carlo Simulation for Boron Diffusion in Si and at SiGe/Si Interface

• Main Authors: Ke, Ren-Shiou, 柯仁修
• Other Authors: Lee, Shyi-Long
• Format: Others
• Language: en_US
• Published: 2012
• Online Access: http://ndltd.ncl.edu.tw/handle/43626213323602527494

碩士 === 國立中正大學 === 化學暨生物化學研究所 === 100 === The kinetic lattice Monte Carlo simulation (KLMC) was applied to study the boron diffusion in SiGe/Si interface beyond nanotechnology. Both the interstitialcy and kick-out mechanisms of boron diffusion were considered, including the effects of annealing temperatures and concentrations of Si self-interstitial defects (Sii). The results show that boron diffusion in Si and at SiGe/Si interface both largely increase as the temperature or concentration of Sii increases, but the boron diffusion at SiGe/Si interface is much less than in Si. The effects on boron diffusion caused by single and double layer(s) of SiGe phase with different Ge contents and varying boron concentrations in double layers of SiGe phase were also simulated. When increasing the Ge contents in SiGe alloy could retard boron diffusion heavily, while increasing the boron concentration in SiGe phase would enhance boron diffusion.