The Design of Ku-band Phase Shifter and Power Amplifier Integrated Circuits

• Main Authors: Hao-Chun Yu, 俞皓鈞
• Other Authors: 蔡政翰
• Format: Others
• Language: zh-TW
• Published: 2010
• Online Access: http://ndltd.ncl.edu.tw/handle/32721297141091848852

碩士 === 元智大學 === 通訊工程學系 === 99 === The design of the Ku-band phase shifter and power amplifier for phase array system applications are presented in this thesis. A 2-bit and a 3-bit phase shifter MMIC using switch-type topology are designed and fabricated on WIN 0.15 μm pHEMT process. The 2-bit switch-type phase shifter MMIC with 90° phase resolution achieves a maximum insertion loss of 6.3 dB at 12 GHz. The RMS phase error of the 2-bit phase shifter is 2.099 degree and the RMS gain error is 0.382 dB. The chip size is 1.5 mm2 including all testing pads. Another 3-bit switch-type phase shifter MMIC with 45° phase resolution achieves a maximum insertion loss of 7.9 dB at 12 GHz. The RMS phase error of the 3-bit phase shifter is 1.62 degree and the RMS gain error is 0.308 dB. The chip size is 1.5 mm2. The simulated and measured results have good agreement for the presented MMICs. A 12 GHz fully-integrated power amplifier is designed and fabricated on TSMC 0.18 μm CMOS technology. The CMOS power amplifier MMIC achieves a small signal gain of 16.9 dB at 12 GHz with chip size 0.81511 × 0.575 mm2. The output power and output 1 dB compression point is 15.27 dBm and 11.26 dBm, respectively. The power added efficiency is 15.3 %.