Study on properties of CdS buffer layer of CIGS thin film solar cell by using thermal treatment

• Main Authors: Pei Ling Chen, 陳珮伶
• Other Authors: 劉宗平
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/94860072628278026144

碩士 === 元智大學 === 光電工程研究所 === 99 === Since CdS material has a direct and wide band-gap, it is very potential for fabricating photovoltaic devices. Due to its wide band-gap, CdS film can be acted as a window material to combine with Cu(In, Ga)Se2 film. Therefore, CdS film grown on glass substrate is usually used to fabricate a high efficiency solar cell. To obtain a quite uniform, easily scaling-up, and inexpensive sample, the CdS thin film with a thickness of 50 nm was deposited by using chemical bath deposition (CBD) method. Through varying annealing temperatures and annealing times, the electrical and optical properties of CdS film could be obviously improved. According to measurements, the transmittance of CdS sample annealed was increased over 80% in the wavelength range of 700-900 nm. And the band gap of CdS sample annealed at 100?C with 20 min is the minimum. Its sheet resistance and band gap are the minimum, relatively, the conductivity is the best. By using those data obtained at various annealing temperatures and times, we can find an optimum condition for growing CdS thin film application on Cu(In, Ga)Se2-based solar cell.