The Effects of Al-doping on the Morphology and Properties of ZnO Nanowires Prepared by MOCVD Method

• Main Authors: Chi-sheng Hsu, 徐啟昇
• Other Authors: mone
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/ygmf4c

碩士 === 國立雲林科技大學 === 材料科技研究所 === 99 === The preparation of ZnO nanowires by the metal organic chemical vapor deposition (MOCVD) is reported here. In the part 1, to be reported is the preparation of highly quasi aligned ZnO nanowires at low temperatures which favor growing one dimension ZnO nanowires. In the part 2, to be reported is the preparation of one dimension Al doped ZnO nanowires (AZO NWs). At first, as a buffer layer a ZnO thin film is coated on ZnO thin film/SiO2/Si substrates. ZnO nanowires are then deposited on these substrates by the MOCVD method. The precursor used is Zn (C5H7O2)2. Growings of ZnO nanowires are carried out on the ZnO thin film/SiO2/Si substrates. The control parameters include various precursors, growing temperatures, distances between gas exits and substrates, and gas flow ratios. The structures of the prepared ZnO nanowires are identified by the instruments FE-SEM, XRD, PL, FE and TEM, and the optimal conditions for preparation are found out. Better conditions for preparation are chosen from above and are used to prepare ZnO nanowires under various dopings of Al, gas flow ratios, precursor temperatures, distances between gas exits and substrates. The amounts of Al staying in the ZnO nanowires are examined with EDS analysis and the shifts of diffraction peaks and UV emission peaks are determined by XRD and PL methods. Best conditions for preparation are therefore decided.