The Research of Ta2O5 Dielectric layer and IGZO Channel layer for Transparent Thin Film Transistors

• Main Authors: Jian-Wei Huang, 黃健維
• Other Authors: Shih-Chih Chen
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/63721322113684928883

碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 99 === In this study, the high mobility of the Indium Gallium Zinc Oxide (IGZO) as the channel layer of a thin film transistor (TFT), by using RF magnetron sputtering method at room temperature of the substrate without heating. The carrier mobility and carrier concentration of the IGZO thin film are dependent on the oxygen content. When the deposition condition of oxygen content is 2%, the IGZO thin film showed the carrier mobility and concentration are 5.3 cm2/V-s and 6.8×1018 cm-3, respectively. And it also showed good transpance about 85%. Tantalum oxide was used as a high dielectric material, in this study. For low leakage, we used the oxygen plasma and post deposition annealing treatment to improve the film leakage current characteristics. After the Ta2O5 thin film was deposited by RF sputtering, it was treated in O2 plasma for 3 minutes. Then it was processed by Furnace annealing in O2 ambient at 250℃ for 3minutes. The processed Ta2O5 thin film showed small leakage about 1.0×10-8 A/cm2 and high dielectric characteristic about 54.2. It showed good performance as a insulator of thin film transistor.