The Research of Ta2O5 Dielectric layer and IGZO Channel layer for Transparent Thin Film Transistors
碩士 === 國立雲林科技大學 === 光學電子工程研究所 === 99 === In this study, the high mobility of the Indium Gallium Zinc Oxide (IGZO) as the channel layer of a thin film transistor (TFT), by using RF magnetron sputtering method at room temperature of the substrate without heating. The carrier mobility and carrier conce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/63721322113684928883 |