Using CMOS-MEMS Process Production of Blood Pressure Sensor and Intracranial Pressure monitoring
碩士 === 國立臺北科技大學 === 機電整合研究所 === 99 === The fabrication of a Blood Pressure Sensor and Intracranial Pressure monitoring using the TSMC 0.35 um complementary metal oxide semiconductor process and a post-process have been investigated. The metal layers of the CMOS process are used as the sensing electr...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2011
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45bbcg |
| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 99 === The fabrication of a Blood Pressure Sensor and Intracranial Pressure monitoring using the TSMC 0.35 um complementary metal oxide semiconductor process and a post-process have been investigated. The metal layers of the CMOS process are used as the sensing electrodes and sacrificial layers, with the cavity spacing about 0.64um. Finally the etching holes in the pressure sensor are sealed with SU8 or sputter deposition Al. This sensor is composed of eight sensing cells containing four variable capacitors and four reference capacitors. The variable and reference capacitors are parallel respectively, able to increase the sensitivity of the sensor. The pressure sensor is connected to fully-differential capacitive sensing circuit that readouts the capacitor variable value. The experimental results show that the pressure sensor has a capacitance variance of 0~88fF, and the sensitivity of 2.076 fF/kPa in pressure measurement range of 0~42.38kPa.
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