An Investigation of ZnO (002) Thin Films Implanted by 40 keV Boron Ions

碩士 === 國立臺北科技大學 === 機電整合研究所 === 99 === In this study, the characteristics of ZnO films were investigated after the film was implanted with boron ions by using a 3MV Tandem Accelerator. The ZnO films were first deposited on the silicon and glass substrates. All specimens were then implanted the 40 ke...

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Bibliographic Details
Main Authors: Shi-chen Wu 吳喜成, 吳喜成
Other Authors: 魏大華
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/xa6jmw