| Summary: | 碩士 === 國立臺北科技大學 === 機電整合研究所 === 99 === In this study, the characteristics of ZnO films were investigated after the film was implanted with boron ions by using a 3MV Tandem Accelerator. The ZnO films were first deposited on the silicon and glass substrates. All specimens were then implanted the 40 keV and 5×1013 ions/cm2, respectively. The XRD, AFM and SIMS were used to study the crystalline, the surface morphology and the distribution of ions. The preferential orientation, texture and grain size of ZnO film were affected by boron ions are discussed.
According to XRD results, the FWHM of ZnO values decreased in the implanted specimens. It revealed that the boron implantation is useful for forming c-axis alignment of ZnO films. The surface roughness was also observed to decrease with the boron treatment. From the SIMS analysis, the distribution of boron ions was within the depth of 0.19μm. It’s very consistent with the SRIM simulation. The results demonstrate that the characteristics of ZnO film could be modified by using the 40 keV boron ion implantation.
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