A Study On The Quality In Polyurethane/Graphite Pad Applied For Chemical Mechanical Polishing Oxide Film Of Wafer

• Main Authors: Chiu-Yuan Chen, 陳秋元
• Other Authors: Kai-Hung Hsu
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/fy5ay6

碩士 === 國立臺北科技大學 === 材料科學與工程研究所 === 99 === In Chemical mechanical polishing (CMP) field, Polyurethane materials is widely use on polishing pad, because it have porous can save the slurry, but easy cause glazing, because the porous size is not average. In this study, we add two micron (60μm) of graphite powder in the polyurethane polymer, one is the natural graphite; the other for the hydrogenation of natural graphite after heat treatment, both in polymer addition level of 0%, 8%, 16 %, 24%, after forming polishing pad made of graphite-free pass (No porous Graphite Pad) and with the conventional diamond disk (DG329) on the wafer oxide, and discuss chemical mechanical polishing and mechanical properties. The experimental results showed that the Hydrogenated graphite pad is not removed more than highly hydrogenated graphite pad, and the wafer surface after removal of oxide layer uniformity are increasing. So we suggestion 8% addition of hydrogenated graphite oxide can achieve the best performance on the removal rate and uniformity.