Exploitation helical AlN layer prepared by oblique rotation of deposition

• Main Authors: Yi-Min Luo, 羅意敏
• Other Authors: Lung-Chien Chen
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/w83k7u

碩士 === 國立臺北科技大學 === 光電工程系研究所 === 99 === AlN is the direct band gap semiconductor material with high chemical stability and high energy gap (about 6.2 eV). AlN and GaN material the lattice are a = 3.112 Å and a = 3.189 Å. Between the two materials the lattice mismatch is about 2.4 % and has good thermal properties is the most suitable on LED the buffer layer material. By rotating the substrate periodically deposition, That oblique angle flux gives deposited films a porous tilted columnar, chevron and zigzag microstructure. That sputtering can use tangent and cosine rules to predict the relationship between the columnar inclination angle (β) and flux angle (α) in low background gas pressures. This study, AlN nanorods structure film deposited with different oblique rotation by reactive radio-frequency magnetron sputtering system for substrate. The different angle of AlN by oblique-angle to tilt the angle of substrate, and the morphology structure was observed. X-ray can be observed which were AlN (101) and sapphire (006) of the diffraction peaks. At different deposition angle AlN films on the x- ray can be found with the deposition angle increases the (101) AlN crystaline will be worse.