Electronic Component Development Research- Ex. DRAM and NandFlash industry

碩士 === 國立臺北科技大學 === 管理學院工業工程與管理EMBA專班 === 99 === This thesis presents research on Dram and Nand Flash technologies, based on a case study of one of the world’s leading memory device manufacturers. The objectives of the research were threefold. First, to investigate whether the advancements of Dram a...

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Main Authors: Feng-Chih Cheng, 鄭豐智
Other Authors: 張文華
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/u8cetu
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spelling ndltd-TW-099TIT050310422019-05-15T20:42:28Z http://ndltd.ncl.edu.tw/handle/u8cetu Electronic Component Development Research- Ex. DRAM and NandFlash industry 電子元件發展研究–以Dram and NandFlash 為例 Feng-Chih Cheng 鄭豐智 碩士 國立臺北科技大學 管理學院工業工程與管理EMBA專班 99 This thesis presents research on Dram and Nand Flash technologies, based on a case study of one of the world’s leading memory device manufacturers. The objectives of the research were threefold. First, to investigate whether the advancements of Dram and Nand Flash have followed Moore’s law. Second, to compare and contrast the advantages of these memory technologies for digital electronic product applications. Third, to analyze the evolution of wafer fabrication processes, and examine whether they have been driven by consumer demand of applications for digital electronics. The subjects of this research, namely, the wafer fabrication processes, the memory design houses, and the consumers of digital electronics, are closely related to one another. The outcomes of the research reveal the cyclical nature of the evolution of wafer fabrication processes. The insight obtained will help product distributors manage inventories and formulate stocking strategies. It will also help researchers and developers of end-user products understand the evolution cycles of memory devices. In all, the insight gained from this research will serve to prevent production interruptions due to IC shortages. The research presented herein is based on a case study of the evolution of Company S’s Dram and Nand Flash technologies. Along the way, it sheds light on how Company S managed to become the world leader in Dram and Nand Flash technology, the milestones it passed on the way to the top, and the unique aspects of its business strategies. By examining the past, present, and future of Company S’s Dram and Nand Flash technologies, and presenting the current status of its fabrication processes, the research will provide companies in related industries with the information needed to future-proof their inventory management and product application portfolios. The research presented the most important are at list: Dram still to abide by Moore’s law increase multiple by 18 months, but Nand Flash according to research datas that improve on Moore’s law to increase multiple by 12 months. 張文華 2011 學位論文 ; thesis 137 zh-TW
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description 碩士 === 國立臺北科技大學 === 管理學院工業工程與管理EMBA專班 === 99 === This thesis presents research on Dram and Nand Flash technologies, based on a case study of one of the world’s leading memory device manufacturers. The objectives of the research were threefold. First, to investigate whether the advancements of Dram and Nand Flash have followed Moore’s law. Second, to compare and contrast the advantages of these memory technologies for digital electronic product applications. Third, to analyze the evolution of wafer fabrication processes, and examine whether they have been driven by consumer demand of applications for digital electronics. The subjects of this research, namely, the wafer fabrication processes, the memory design houses, and the consumers of digital electronics, are closely related to one another. The outcomes of the research reveal the cyclical nature of the evolution of wafer fabrication processes. The insight obtained will help product distributors manage inventories and formulate stocking strategies. It will also help researchers and developers of end-user products understand the evolution cycles of memory devices. In all, the insight gained from this research will serve to prevent production interruptions due to IC shortages. The research presented herein is based on a case study of the evolution of Company S’s Dram and Nand Flash technologies. Along the way, it sheds light on how Company S managed to become the world leader in Dram and Nand Flash technology, the milestones it passed on the way to the top, and the unique aspects of its business strategies. By examining the past, present, and future of Company S’s Dram and Nand Flash technologies, and presenting the current status of its fabrication processes, the research will provide companies in related industries with the information needed to future-proof their inventory management and product application portfolios. The research presented the most important are at list: Dram still to abide by Moore’s law increase multiple by 18 months, but Nand Flash according to research datas that improve on Moore’s law to increase multiple by 12 months.
author2 張文華
author_facet 張文華
Feng-Chih Cheng
鄭豐智
author Feng-Chih Cheng
鄭豐智
spellingShingle Feng-Chih Cheng
鄭豐智
Electronic Component Development Research- Ex. DRAM and NandFlash industry
author_sort Feng-Chih Cheng
title Electronic Component Development Research- Ex. DRAM and NandFlash industry
title_short Electronic Component Development Research- Ex. DRAM and NandFlash industry
title_full Electronic Component Development Research- Ex. DRAM and NandFlash industry
title_fullStr Electronic Component Development Research- Ex. DRAM and NandFlash industry
title_full_unstemmed Electronic Component Development Research- Ex. DRAM and NandFlash industry
title_sort electronic component development research- ex. dram and nandflash industry
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/u8cetu
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