Synthesis And Characterizations Of Tapered Silicon Nanorods

碩士 === 東海大學 === 物理學系 === 99 === One-dimensional nanostructures have attracted significant attention in the last few years, due to their potential application in optoelectronics and nanoelectronics. In particular, the tapered silicon nanostructures with their high aspect ratio and sharp tip radius ar...

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Main Authors: Zong-Yi Jiang, 江宗益
Other Authors: Hsi-Lien Hsiao
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/18262516569164158157
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spelling ndltd-TW-099THU001980062016-04-13T04:16:57Z http://ndltd.ncl.edu.tw/handle/18262516569164158157 Synthesis And Characterizations Of Tapered Silicon Nanorods 錐狀矽奈米柱合成及特性研究 Zong-Yi Jiang 江宗益 碩士 東海大學 物理學系 99 One-dimensional nanostructures have attracted significant attention in the last few years, due to their potential application in optoelectronics and nanoelectronics. In particular, the tapered silicon nanostructures with their high aspect ratio and sharp tip radius are expected to be good candidates for field emitters. In this study, we expect to fabricate tapered silicon nanorods on large area noncrystalline substrates at middle temperature. Tapered single crystal silicon nanorods have been grown with Au/Ga alloy catalyst by chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of gallium catalyst thickness, the position in our system and growth time. We observe that the crystalline quality of the nanorods increases with the position in which they have been synthesized. As the gallium thickness over than 5 nm, the areas of non-growth were observed in the samples. The average diameter (dB) increases with growth time. We show that the tapering is caused by the uncatalyzed deposition of silicon on the sidewalls of the nanorod as the nanorod continues to grow in the axial direction. Hsi-Lien Hsiao 蕭錫鍊 2011 學位論文 ; thesis 64 zh-TW
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description 碩士 === 東海大學 === 物理學系 === 99 === One-dimensional nanostructures have attracted significant attention in the last few years, due to their potential application in optoelectronics and nanoelectronics. In particular, the tapered silicon nanostructures with their high aspect ratio and sharp tip radius are expected to be good candidates for field emitters. In this study, we expect to fabricate tapered silicon nanorods on large area noncrystalline substrates at middle temperature. Tapered single crystal silicon nanorods have been grown with Au/Ga alloy catalyst by chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of gallium catalyst thickness, the position in our system and growth time. We observe that the crystalline quality of the nanorods increases with the position in which they have been synthesized. As the gallium thickness over than 5 nm, the areas of non-growth were observed in the samples. The average diameter (dB) increases with growth time. We show that the tapering is caused by the uncatalyzed deposition of silicon on the sidewalls of the nanorod as the nanorod continues to grow in the axial direction.
author2 Hsi-Lien Hsiao
author_facet Hsi-Lien Hsiao
Zong-Yi Jiang
江宗益
author Zong-Yi Jiang
江宗益
spellingShingle Zong-Yi Jiang
江宗益
Synthesis And Characterizations Of Tapered Silicon Nanorods
author_sort Zong-Yi Jiang
title Synthesis And Characterizations Of Tapered Silicon Nanorods
title_short Synthesis And Characterizations Of Tapered Silicon Nanorods
title_full Synthesis And Characterizations Of Tapered Silicon Nanorods
title_fullStr Synthesis And Characterizations Of Tapered Silicon Nanorods
title_full_unstemmed Synthesis And Characterizations Of Tapered Silicon Nanorods
title_sort synthesis and characterizations of tapered silicon nanorods
publishDate 2011
url http://ndltd.ncl.edu.tw/handle/18262516569164158157
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