| Summary: | 碩士 === 東海大學 === 物理學系 === 99 === One-dimensional nanostructures have attracted significant attention in the last few years, due to their potential application in optoelectronics and nanoelectronics. In particular, the tapered silicon nanostructures with their high aspect ratio and sharp tip radius are expected to be good candidates for field emitters.
In this study, we expect to fabricate tapered silicon nanorods on large area noncrystalline substrates at middle temperature. Tapered single crystal silicon nanorods have been grown with Au/Ga alloy catalyst by chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of gallium catalyst thickness, the position in our system and growth time.
We observe that the crystalline quality of the nanorods increases with the position in which they have been synthesized. As the gallium thickness over than 5 nm, the areas of non-growth were observed in the samples. The average diameter (dB) increases with growth time.
We show that the tapering is caused by the uncatalyzed deposition of silicon on the sidewalls of the nanorod as the nanorod continues to grow in the axial direction.
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