Fabrication of Graphene-based Field-effect Transistor and Its Electric Measurement

碩士 === 東海大學 === 物理學系 === 99 === Graphene is a 2D material with honeycomb lattice. We exfoliated graphene by Scotch tape on 300 nm silicon oxide layer and the substrate is p-type silicon substrate. The number of layers was identified by Raman spectroscopy before make it into graphene devices....

Full description

Bibliographic Details
Main Authors: Yang, Zan-Hwa, 楊贊樺
Other Authors: Chien, Forest Shih-Sen
Format: Others
Language:zh-TW
Published: 2011
Online Access:http://ndltd.ncl.edu.tw/handle/34108716370375648550

Similar Items