Reliability Analysis of Nitride-based Light-Emitting Diodes with Different Current Blocking Layer
碩士 === 南台科技大學 === 電子工程系 === 99 === In this study, Ar plasma treatment was employed to selectively damage the area under the p-pad electrode of GaN-based LEDs. For comparison, LED without current blocking layer (CBL) and LED with a PECVD SiO2 CBL were also fabricated. Compared with PECVD of SiO2 CBL,...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/26791778177831707248 |