The Reliability Analysis of InGaAs P-I-N Photodetectors with Different Zinc Diffusion Time
碩士 === 南台科技大學 === 電子工程系 === 99 === InGaAs P-I-N Photobetectors (PDs) with two different Zn diffusion times were fabricated and investigated. Zn diffusion depths of the two samples were 1.1 μm and 1.5 μm, respectively. It was found that the dark current for the two samples were 284 pA and 133 pA, res...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/09291982562026933528 |