Effects of various thicknesses of electron transporting and hole injection layers on performance of organic light-emitting diodes

• Main Authors: Chen, Yenchun, 陳彥均
• Other Authors: Chang, Rweiching
• Format: Others
• Language: zh-TW
• Published: 2011
• Online Access: http://ndltd.ncl.edu.tw/handle/43223149106074094879

碩士 === 聖約翰科技大學 === 自動化及機電整合研究所 === 99 === Organic light-emitting diodes (OLEDs) are full of potential in the applications of displays and lighting because of low voltage and high lighting efficiency. In this work, the OLED is deposited on ITO/Glass by evaporation, and the effects of various thicknesses of electron transporting and hole injection layers on the OLED performance are discussed. Various depositions Al 200 nm/Lif 1 nm/Alq3 20, 40, 60 nm/ NPB 120 nm/PEDOT:PSS 0, 30, 40 nm/ITO 130 nm are considered. A 3D-profiler is utilized to measure the film thickness and residual stresses, where the microstructures and grain sizes are measured by X-ray diffraction. A nanoindenter are adopted to determine the hardness, and reduced modulus of the components, while the surface appearance is measured by the atomic force microscopy. The results show that the OLED with spun PEDOT:PSS 40 nm, and evaporated Al 200 nm/Lif 1 nm/Alq3 40 nm/ NPB 120 nm resulted in 149.72 cd/m2 at 5 V has the best luminance performance, whose mechanical properties are also better than those with other layer thicknesses.